Method for fabricating a bipolar junction transistor exhibiting

Details Method for fabricating a bipolar junction transistor exhibiting Method for fabricating a bipolar junction transistor exhibiting

1995-01-25

1996-03-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437154, 437909, 148DIG10, H01L 218222

Patent

active

054967465

ABSTRACT:
A bipolar transistor having an emitter, a base, and a collector includes an intrinsic base region having narrow side areas and a wider central area. The side areas are located adjacent to the extrinsic base region, while the central area is disposed underneath the emitter. The lateral doping profile of the base is tailored so that the doping concentrations in the extrinsic region and the central area are relatively high compared to the doping concentration of the narrow side areas of the intrinsic base. The combination of the narrow side areas and the lateral base doping profile constrains the depletion region within the base thereby lowering punch-through voltage of the transistor without loss of beta.

REFERENCES:
patent: 4996581 (1991-02-01), Hamasaki
patent: 5140400 (1992-08-01), Morishita
patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5185276 (1993-02-01), Chen et al.
patent: 5198373 (1993-03-01), Yoshino
patent: 5217909 (1993-06-01), Bertagnolli
patent: 5320972 (1994-06-01), Wylie
patent: 5336926 (1994-08-01), Mathews

Affiliated with

Also associated with

Rating

Method for fabricating a bipolar junction transistor exhibiting does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a bipolar junction transistor exhibiting , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a bipolar junction transistor exhibiting will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1412587