Manufacturing method for a semiconductor device having a bias sp

Details Manufacturing method for a semiconductor device having a bias sp Manufacturing method for a semiconductor device having a bias sp

1991-05-22

1993-01-26

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437180, 437187, 437235, 20419222, 20419223, 148DIG118, H01L 21283

Patent

active

051822350

ABSTRACT:
To cover a conductive interconnection (2) of a semiconductor device (1) at high speed with an insulating film (3) having good step coverage, a conductive dummy pattern (8) is provided around the interconnection (2) in spaced relationship therewith. The dummy pattern (8) and interconnection (2) are then covered with insulating film 3 using the bias sputtering method. The dummy pattern (8) and interconnection (2) are preferably applied simultaneously to the substrate using a single mask.

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Logan, "Control of RF Sputtered Film Properties Through Substrate Tuning", IBM J. Res Develop, Mar. 1970, pp. 172-175.
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Mumtax, "RF Magnetron Sputtered Silicon Dioxide With RF Bias", Matls. Res. Corp.
Patent Abstracts of Japan, vol. 9, No. 61, Mar. 19, 1985 "Manufacture of Wiring Structure", Tooru Mogami.

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