Process of fabricating multi-level wiring structure, incorporate

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437982, 148DIG133, H01L 2144, H01L 2148

Patent

active

051107635

ABSTRACT:
A process of fabricating a multi-level wiring structure starts with preparation of a semiconductor substrate covered with a lower insulating film, and comprises the steps of forming lower-level wiring strips on the lower insulating film, covering the lower-level wiring strips and exposed portions of the lower insulating film with a first intermediate insulating film, coating the entire surface with an organic glass film, removing the organic film except for pieces of the organic glass film in valleys between the lower-level wiring strips, coating the entire surface with an inorganic glass film, removing the inorganic glass film except for pieces of the inorganic glass film on the pieces of the organic glass film, covering the entire surface with a second intermediate insulating film, and forming upper-level wiring strips on the intermediate insulating film, wherein the pieces of the inorganic glass film prevent the upper-level wiring strips from corrosion due to water vapor produced from the pieces of the organic glass film.

REFERENCES:
"Semicon News 1988.7", pp. 72-77.

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