Semiconductor memory device and method of writing and reading ou

Details Semiconductor memory device and method of writing and reading ou Semiconductor memory device and method of writing and reading ou

1992-10-20

1995-03-07

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

36518901, 365182, 365200, G11C 700

Patent

active

053964586

ABSTRACT:
In a semiconductor memory device, when positive high voltages are respectively applied to a control gate(20) and a drain region(14) and a source region(13) is grounded, hot electrons are produced in the boundary between the drain region(14) and a channel region. The hot electrons are injected into a floating gate(18) through a tunnel oxide film(17). Consequently, information is written. At the time of reading out information, the drain region(14) is grounded, a positive read voltage is applied to the source region(13), and a predetermined sense voltage is applied to the control gate(20). At this time, the area between the source and the drain is kept in a non-conduction state if electrons are stored in the floating gate(18), while conduction occurs between the source and the drain if no electrons are stored therein. Since no hot electrons are produced in the boundary between the drain region(14) and the channel region at the time of reading, it is possible to effectively prevent so-called soft writing.

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