Plasma processing apparatus

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

156345, 118723, 20429834, H05H 146, B01J 1912

Patent

active

051104377

ABSTRACT:
A plasma processing apparatus includes a chamber, a pair of spaced apart electrodes positioned within the chamber, a gas evacuation pipe for evacuating the chamber and a gas feed pipe for introducing gas into the chamber. At least one of the electrodes and the gas evacuation and feed pipes can be selectively moved by lifting devices in opposite directions along which the electrodes oppose each other. Further, a polarity of the voltage applied to the electrodes is reversible.

REFERENCES:
patent: 4908095 (1990-03-01), Kagatsume et al.

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