Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-03-23
1996-04-09
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257761, 257762, 257770, H01L 2348, H01L 2352, H01L 2940
Patent
active
055064493
ABSTRACT:
An interconnection structure for semiconductor integrated circuits and the method for manufacturing of the same are provided. The interconnection structure has a low electric resistance and a good electromigration resistance and can prevent the atoms in wire materials from diffusing into insulating films or substrates. More particularly, an insulating film 12 is formed on a silicon substrate 10, on which a tungsten 14 is formed. The tungsten film 14 is subjected to plasma irradiation on the surface thereof to form an amorphous W--N film 16. A copper wire pattern 20 is formed on the amorphous W--N film 16.
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"IBM Technical Disclosure Bulletin", Method of Fabricating Gold Interconnections With Tantalum-coated Vertical and Horizontal Surfaces.
Nakano Tadashi
Ono Hideaki
Clark Jhihan
Crane Sara W.
Kawasaki Steel Corporation
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