Thin film transistor device having driving circuit and matrix ci

Details Thin film transistor device having driving circuit and matrix ci Thin film transistor device having driving circuit and matrix ci

1993-06-02

1995-03-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 59, 257350, 257351, 257411, H01L 2904, H01L 2701, H01L 2712, H01L 2976

Patent

active

053960840

ABSTRACT:
A thin film semiconductor device comprises a matrix circuit portion and a peripheral circuit portion. An NMOS thin film transistor included in the peripheral circuit portion comprises as an active layer a polysilicon thin film formed on a substrate, leading to a high on-current and an improved switching speed, compared with a thin film transistor including as an active layer of a polysilicon thin film which is obtained by crystallizing an amorphous silicon thin film. An NMOS thin film transistor included in the matrix circuit portion also comprises as an active layer a polysilicon thin film which is formed on the substrate. However, the gate insulating film of an NMOS thin film transistor in the matrix circuit portion as a whole is made thicker than that in the NMOS thin film transistor included in the peripheral circuit portion because of the presence of a first interlayer insulating film.

REFERENCES:
patent: 3840695 (1974-10-01), Fischer
patent: 4395726 (1983-07-01), Maeguchi
patent: 5060034 (1991-10-01), Shimizu et al.

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