Method of fabricating semiconductor devices having electrodes co

Details Method of fabricating semiconductor devices having electrodes co Method of fabricating semiconductor devices having electrodes co

1993-10-04

1995-03-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437 34, 437 56, 437193, 148DIG106, 148DIG147, H01L 21283, H01L 21335

Patent

active

053957997

ABSTRACT:
A workpiece is formed comprising a silicon substrate covered by four successive layers of silicon dioxide, undoped polysilicon, undoped WSi.sub.2 and a top layer of silicon dioxide on silicon nitride. The four layers are patterned to provide gate electrode structures each comprising the four layers. The workpiece is covered with a masking layer and the top layer of each structure is exposed through the masking layer. The top layers are then removed and ions of one conductivity type are implanted into the WSi.sub.2 layers of one group of gate electrode structures while another group of structures is masked, and ions of the other conductivity type are implanted into the WSi.sub.2 layers of the second group while the first group is masked. Thereafter, doped regions are formed in the substrate adjacent to the gate electrode structures.

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