Method of making a DRAM cell with trench capacitor

Details Method of making a DRAM cell with trench capacitor Method of making a DRAM cell with trench capacitor

1994-06-30

1995-03-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

053957865

ABSTRACT:
A DRAM cell of the trench capacitor type is formed by a simplified process that reduces cost and increases process latitude by forming the trench collar in a single step of expanding a shallow trench horizontally and conformally coating the collar; etching the trench to its final depth and implanting the bottom heavily and doping the walls lightly; recessing the poly liner in a non-critical step that exposes a contact area between the top of the poly and the adjacent transistor electrode.

REFERENCES:
patent: 4663832 (1987-05-01), Jamotlcar
patent: 4999312 (1991-03-01), Yoom
patent: 5330926 (1994-07-01), Sato

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