Method of manufacturing an integrated circuit having a memory el

Details Method of manufacturing an integrated circuit having a memory el Method of manufacturing an integrated circuit having a memory el

1993-10-06

1995-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 57, 437983, H01L 21266

Patent

active

053957784

ABSTRACT:
If the process were to be changed for optimizing the injection of hot electrons into the channel of the memory transistor in the manufacture of an integrated circuit having an embedded EPROM, this could lead to degradation of the transistors in the logic, in particular in the case of channel lengths below 1 .mu.m. To prevent this, a process is presented by which the non-volatile memory is optimized without the properties of the logic being affected. For this purpose, a first series of steps is performed in which first the floating gate is defined, followed by the source/drain implantation and a side-wall oxidation for obtaining an oxide spacer on the sides of the floating gate. During these steps, the region of the logic to be formed is uniformly protected against implantation and oxidation by the same poly layer from which the floating gate is made. Then, in a second series of steps, the usual CMOS process is carried out whereby first the gates of the transistors are formed, followed by the necessary source/drain implantations.

REFERENCES:
patent: 4598460 (1986-07-01), Owens et al.
patent: 4719184 (1988-01-01), Cantarelli et al.
patent: 4766088 (1988-08-01), Kono et al.
patent: 4775642 (1988-10-01), Chang et al.
patent: 4859619 (1989-08-01), Wu et al.
patent: 5036018 (1991-07-01), Mazzali

Affiliated with

Also associated with

Rating

Method of manufacturing an integrated circuit having a memory el does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing an integrated circuit having a memory el, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an integrated circuit having a memory el will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1405705