Method for manufacturing lateral bipolar transistors

Details Method for manufacturing lateral bipolar transistors Method for manufacturing lateral bipolar transistors

1994-06-14

1995-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437917, 437 28, 148DIG10, H01L 21265

Patent

active

053957750

ABSTRACT:
A method for manufacturing lateral bipolar transistors, whereby a highly doped collector zone is produced in the silicon layer of a SOI substrate provided with a basic doping and using a mask. A structured dielectric layer covering at least this collector zone is then applied. This dielectric layer leaves the region provided for the emitter and the base free. This region left free is re-doped, and an auxiliary layer is then applied surface-wide with a uniform thickness. A doping for an emitter zone is introduced by using this auxiliary layer as shielding for the base zone to be manufactured. Subsequently, the emitter, base and collector are provided with contacts.

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patent: 5273915 (1993-12-01), Hwang et al.
T. Sugii et al., "A New SOI-Lateral Bipolar Transistor for High-Speed Operation", Jap. J. Appl. Phy. 30, L2080-L2082 (1991).

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