Graded implantation of oxygen and/or nitrogen constituents to de

Details Graded implantation of oxygen and/or nitrogen constituents to de Graded implantation of oxygen and/or nitrogen constituents to de

1994-04-25

1995-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 26, 437 27, H01L 21265

Patent

active

053957717

ABSTRACT:
A graduated concentration profile is used defining a buried isolation region in a semiconductor device. Smaller concentrations of dielectric-defining particles are used for implantation at the deepest levels of the isolation region in order to reduce the defect density in an overlying epi layer.

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patent: 5196355 (1993-03-01), Wittkower
K. J. Reeson, Electronics Letters, vol. 22, #9, Apr. 1986 "Formation of Multilayer Si.sub.3 N.sub.4 Str. R by Nitrogen Ion Impl."
A. E. White et al., Appl. Phys. Lett., 50(1), 5 Jan. 1987, 320 "Mechanisms of buried oxide formation by ion implantation".
D. Hill et al., J. Appl. Phys., 63(10) 15 May 1988, 4933 "The reduction of dislocations in O implanted SOI by seq. ion impl."
S. N. Bunker et al., Mat. Res. Soc. Symp. Proc., vol. 93 p. 125 "Formation of SOI Structures by multiple oxygen implantations".
Nakashima et al., Buried oxide layers formed by low-dose oxygen implantation, J. Mater. Res., vol. 7, No. 4, Apr. 1992, pp. 788-790.
Nakashima et al., SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter, Nuclear Instruments and Methods in Physics Research B55 (1991) pp. 847-851.

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