Apparatus made of silica for semiconductor device fabrication

Details Apparatus made of silica for semiconductor device fabrication Apparatus made of silica for semiconductor device fabrication

1993-06-17

1995-03-07

Chaudhuri, Olik

Coating apparatus

Gas or vapor deposition

118726, 118728, C23C 1600

Patent

active

053954521

ABSTRACT:
In a apparatus made of silica such as a heating furnace, a wafer basket, stick or the like used for semiconductor device fabrication, a first silica layer on the side faced to a semiconductor wafer contains a large amount of the OH group, and a second silica layer on the opposed side contains a small amount of the OH group. With this structure, it is possible to reduce the amount of impurities released through the first silica layer, and to suppress the deformation of the apparatus by the second silica layer. Also, by holding a third silica layer between the first and second silica layers, it is possible to further reduce the amount of impurities released from the first silica layer.

REFERENCES:
patent: 4317668 (1982-03-01), Susa et al.
patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 4830982 (1989-05-01), Dentai et al.
patent: 5119761 (1992-06-01), Nakata
Database WPI Week 9135, Derwent Publications Ltd., London, GB; AN 91-258087 & JP-A-3170 340 (Shin-Etsu) 23 Jul. 1991.

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