Gate protection device for MOS circuits

Details Gate protection device for MOS circuits Gate protection device for MOS circuits

1976-12-28

1978-02-07

James, Andrew J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 51, 361273, 361275, H01L 2978, H01L 2702

Patent

active

040729761

ABSTRACT:
The specification describes an integrated device for the input protection of MOS circuits. It consists of an MOS capacitor formed by the thinning of a section of the input gate dielectric, SiO.sub.2, and the thinning of an adjoining section of the gate metal, Al. An incoming pulse of static charge with high amplitude and short duration will break down the thinned dielectric of the capacitor before breaking down the relatively thick portion of the gate dielectric. Since the metal over the thin dielectric is also relatively thin, it evaporates from the vicinity of the fault by the generated Joule heat immediately following the breakdown. Thus, the breakdown is self healed and can be repeated many times without damaging the circuit.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3403270 (1968-09-01), Pace et al.
patent: 3413497 (1968-11-01), Atalla
patent: 3423606 (1969-01-01), Wanlass
patent: 3623217 (1971-11-01), Kawagoe
patent: 3787717 (1974-01-01), Fischer
IBM Technical Disclosure Bulletin; by Fischer et al., vol. 13, No. 5, Oct. 1970, pp. 1272 and 1273.

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