Semiconductor photodetector device

Details Semiconductor photodetector device Semiconductor photodetector device

1991-01-08

1991-10-29

Wojciechowicz, Edward J.

357 16, 357 86, 357 88, 357 58, H01L 2714

Patent

active

050619772

ABSTRACT:
A fast-response semiconductor photodetector device includes a semiconductor light-absorptive layer of a first conductivity type disposed on a semiconductor substrate of the first conductivity type, and a light-transmissive layer on the light-absorptive layer having a smaller relative dielectric constant than the light-absorptive layer. A semiconductor region of a second conductivity type is selectively formed in the light-transmissive layer to a depth which is less than the thickness of the light-transmissive layer. The second conductivity type region has includes extensions extending into the light-absorptive layer.

REFERENCES:
patent: 4887138 (1989-12-01), Gardner
Yonetsu et al., "Light-Emitting . . . Devices", Kogayu Tosho Suppan Kabushiki Kaisha, Feb. 15, 1984.

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