MOS type field effect transistor having LDD structure

Details MOS type field effect transistor having LDD structure MOS type field effect transistor having LDD structure

1991-02-20

1991-10-29

James, Andrew J.

357 233, 357 239, H01L 2910

Patent

active

050619756

ABSTRACT:
An MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) of the present invention comprises two source.multidot.drain impurity regions formed spaced apart from each other in a semiconductor substrate. At least a drain side of the two impurity regions has a so called LDD structure in which a region of higher concentration and a region of lower concentration are off set. A gate electrode having a rectangular cross section is formed on the semiconductor substrate between the source and drain with an insulating film interposed therebetween. The gate electrode fully covers the lower concentration region of the LDD structure directly therebelow. The position of the side surface of the gate electrode is approximately aligned with the end surface of the region of higher concentration. The impurity region of lower concentration of the LDD is formed by oblique ion implantation.

REFERENCES:
patent: 4288806 (1981-09-01), Ronen
patent: 4291321 (1981-09-01), Pfleiderer et al.
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4712124 (1987-12-01), Stupp
P. J. Tsang et al., "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology", IEEE Trans. Electron Devices, ED-29, 590, 1982.
T. Y. Huang et al., "A Novel Submicron LDD Transistor With Inverse-T Gate Structure", Technical Digest of International Electron Devices Meeting, 1986, p. 742.
R. Izawa et al., "The Impact of Gate-Drain Overlapped LDD (Gold) For Deep Submicron VLSI's", Technical Digest of International Electron Devices Meeting, 1987, p. 38.

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