Energy band leveling modulation doped quantum well

Details Energy band leveling modulation doped quantum well Energy band leveling modulation doped quantum well

1990-06-04

1991-10-29

Hille, Rolf

357 16, 357 17, H01L 2712, H01L 4500, H01L 29161, H01L 3300

Patent

active

050619705

ABSTRACT:
A superlattice structure comprising a host quantum well with a plurality of mini quantum wells formed therein is provided. The host quantum well has a confined energy state E.sub.2 which lies very near a lower band energy V.sub.1 of the host well, while each of the mini quantum wells has a single confined energy level E.sub.1 which lies below V.sub.1. Charge carriers are provided to the quantum well by doping material in the barrier layers to provide modulation doping of the quantum well. The mini quantum wells contain at least one monolayer of another material within their boundaries. The monolayer material is preferably electrically inactive and is a source of phonons which are generated for the purpose of charge carrier-phonon coupling in order to cause charge carrier pairing. In a preferred embodiment a transfer quantum well is formed between the barrier region of the host quantum well and the outermost mini quantum wells. The transfer quantum well has an energy state which couples to the E.sub.1 energy state of the mini quantum wells and serves to transfer charge to the mini quantum wells.

REFERENCES:
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4348686 (1982-09-01), Esaki et al.
patent: 4760579 (1988-07-01), Schulman et al.
patent: 4857971 (1989-08-01), Burnham
"The Tunneling of Electron-Hole Pairs in a Raman Scattering Study of a Thin Layer GaAs/AlAs Superlattice", Grinin et al., Solid State Communications, vol. 67, #3, pp. 317-319, 1988.
"Stimulated Emission in Ultra Thin (20 .ANG.) Al.sub.x Ga.sub.1-x As-GaAs Single Quantum Well Hetero Structures", Lo et al, App. Phys. Lett., vol. 52, #22, 30 May 1988, pp. 1353-1355.

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