Plasma anodization system

Details Plasma anodization system Plasma anodization system

1984-11-08

1986-04-29

Andrews, R. L.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204164, 204192R, 118 501, 118723, 156345, C23C 1400

Patent

active

045855412

ABSTRACT:
A cusp field is applied between a plasma source of a vacuum chamber of a plasma anodization system and a substance such as a semiconductor substrate or a metal plate to be oxidized so that the substance may not be adversely affected by the plasma. The temperature control can be conducted independently of the plasma generating condition because the substance to be treated is not adversely affected by the plasma in a direct manner.

REFERENCES:
patent: 4180450 (1979-12-01), Morrison
Physics & Chem. Dictionary (3rd Ed. 1971), p. 241.
Introduction to Plasma Physics, Chen, 1974, pp. 38-41.
Advances in Plasma Physics, Chen, vol. 4, (1971), pp. 79-83, 120-122.

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