Semiconductor device with multi-layered electrodes

Details Semiconductor device with multi-layered electrodes Semiconductor device with multi-layered electrodes

1981-01-15

1984-05-29

Munson, Gene M.

357 2311, 357 41, 357 54, 357 59, 357 71, H01L 2978, H01L 2702, H01L 2934, H01L 2904

Patent

active

044518412

ABSTRACT:
A first semiconductor circuit element including a first electrode is formed on a semiconductor substrate, an inter-layer insulating layer for insulating the first electrode is formed on the first electrode, and a first penetrating opening is provided in a part of the inter-layer insulating layer.
Subsequently, a step of forming a second semiconductor circuit element is carried out, this step including a step of forming a second electrode so that at least a part thereof may overlie the inter-layer insulating layer at an area other than the first penetrating opening. Further, a subsidiary interconnection conductive layer is buried into the first opening. Another insulating layer is formed on the structure thus formed, whereupon second and third penetrating openings are respectively provided in the insulating layer over the second electrode and the interconnection subsidiary conductive layer.
First and second interconnection conductors are respectively buried into the second and third penetrating openings. The first electrode is conductively connected with the second interconnection conductor in the third opening via the subsidiary interconnection conductive layer in the first opening. The second electrode is conductively connected with the first interconnection conductor in the second opening.

REFERENCES:
patent: 4012767 (1977-03-01), Brown et al.
patent: 4112575 (1978-09-01), Fu et al.
patent: 4136434 (1979-01-01), Thibault et al.

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