Method of producing SOI structures

Details Method of producing SOI structures Method of producing SOI structures

1991-02-11

1991-10-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437109, 437173, 437174, 437973, 148DIG154, 148DIG93, 156603, H01L 2120, H01L 21268

Patent

active

050616552

ABSTRACT:
A method of producing so-called SOI structures according to this invention includes the step of forming an opening for seeding after an insulating layer of predetermined thickness has been formed on a first monocrystal silicon layer. Further, a non-monocrystal layer, e.g., a polycrystal silicon layer is formed on the surface of the insulating layer. The surface of the polycrystal silicon layer is smoothed as by grinding. A reflection-preventive film is formed on the smoothed surface of the polycrystal silicon layer. The reflection-preventive film has a thin film region whose reflectance is substantially zero and a thick film region having a predetermined reflectance. During laser annealing, the reflection-preventive film produces a predetermined temperature distribution in the polycrystal silicon layer. The polycrystal silicon layer which has melted according to this temperature distribution recrystallizes from adjacent the seed portion and thereby forms a new monocrystal silicon layer over the entire surface. The smoothing process for the polycrystal silicon layer prevents any change in the reflectance of the reflection-preventive film and improves control on the temperature distribution in the polycrystal silicon layer.

REFERENCES:
patent: 4390392 (1983-06-01), Robinson et al.
patent: 4523962 (1985-06-01), Nishimura
patent: 4578142 (1986-03-01), Carboy, Jr. et al.
patent: 4714684 (1987-12-01), Sugahar et al.
patent: 4855014 (1989-08-01), Kakimoto et al.
patent: 4933298 (1990-06-01), Hasegawa

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