Method of fabricating a thin-film transistor

Details Method of fabricating a thin-film transistor Method of fabricating a thin-film transistor

1989-08-28

1991-10-29

Chandhuri, Olik

Fishing, trapping, and vermin destroying

431101, 431141, 431160, 431189, 431950, H01L231225, H01L 2128

Patent

active

050616480

ABSTRACT:
A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.

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Seki, "Method of Matching the Gate to the Source-Drain Gap in a TFT", IBM Technical Disclosure Bulletin, vol. 7, No. 4, Sep. 1964, pp. 338-339.

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