Aluminum gallium nitride laser

Details Aluminum gallium nitride laser Aluminum gallium nitride laser

1991-02-01

1992-09-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 49, 372 99, H01S 319

Patent

active

051464659

ABSTRACT:
An improved aluminum gallium nitride material is disclosed, which permits the fabrication of improved optical devices such as laser mirrors (1, 2), as well as quantum wells and optical filters. The optical devices are constructed by depositing a buffer layer (7) of aluminum nitride onto a substrate (6), with alternating layers (10, 12, 14, etc.) of Al.sub.x Ga.sub.1-x N and Al.sub.y Ga.sub.1-y N, where x and y have values of between 0 and 1. Edge emitting lasers (31), surface emitting lasers (52) and quantum wells operating in the ultraviolet region are disclosed. The method of the present invention permits the ability to deposit thin, reproducible and abrupt layers of the improved material to permit the construction of rugged, solid state devices operating at ultraviolet wavelengths.

REFERENCES:
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patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5012486 (1991-04-01), Luryi et al.
patent: 5052008 (1991-09-01), Kemeny
"Properties of Zn-Doped VPE-Grown GaN. I. Luminescence Data in Relation to Doping Conditions", Monemar et al., Journal of Applied Physics, vol. 51, No. 1, pp. 625-639, Jan. 1980.
"Improvements on the Electrical and Luminescence Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AlN-Coated Sapphire Substrates", S. Yoshida et al., Applied Physics Letters, vol. 42, No. 5, pp. 427-429, Mar. 1, 1983.
"Epitaxial Growth of GaN/AlN Heterostructures", Yoshida et al., Journal of Vacuum Science Technology, pp. 250-253, Apr.-Jun. 1983.
"P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Amano et al., Japanese Journal of Applied Physics, vol. 28, No. 12 (Dec. 1989), pp. L2112-L2114.
"Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer", Japanese Journal of Applied Physics, vol. 29, No. 2, pp. L205-L206, Feb. 1990.
"Photoluminescence Characteristics of AlGaN-GaN-AlGaN Quantum Wells", Kahn et al., Applied Physics Letters, vol. 56, pp. 1257-1259, Mar. 26, 1990.

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