Method of passivating crystalline substrates

Details Method of passivating crystalline substrates Method of passivating crystalline substrates

1988-06-02

1990-07-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437980, 136258, H01L 21223, H01L 21322, H01L 3118

Patent

active

049450654

ABSTRACT:
A method of bulk passivating a crystalline or polycrystalline substrate made from silicon, germanium, gallium arsenide or other III-V compounds, and II-VI compounds by exposing the substrate to a fluorine ion beam created by a Kaufman ion source. The Kaufman ion source is controlled so that the intensity of and duration of exposure to the fluorine ion beam is sufficient to bulk passivate the substrate. Preferably, the substrate is preheated to a selected temperature prior to the ion beam exposure.

REFERENCES:
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4569697 (1986-02-01), Tsu et al.
patent: 4613382 (1986-09-01), Katayama et al.
patent: 4637869 (1987-01-01), Glocker et al.
patent: 4751191 (1988-06-01), Gonsiorawski et al.
Seager et al., J. Vac. Sci. Technol., 20 (3) (Mar. 1982), pp. 430-435.

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