Field-effect transistor having a channel region of a Group III-V

Details Field-effect transistor having a channel region of a Group III-V Field-effect transistor having a channel region of a Group III-V

1983-04-26

1985-12-03

James, Andrew J.

357 232, 357 58, 357 16, 357 42, 357 41, H01L 2978, H01L 2912, H01L 29161, H01L 2702

Patent

active

045568952

ABSTRACT:
A field-effect semiconductor device having a channel region formed of two superimposed semiconductor layers, each layer being of a different type semiconductor. As between these two kinds of semiconductors, both the electron affinity and the sum of the electron affinity and the energy gap of one semiconductor is larger than the electron affinity and the sum of the electron affinity and the energy gap of the other semiconductor. This relationship is obtained by forming one of the semiconductor layers of Group III-V compound semiconductor and the other of Group IV semiconductor. The fabrication of the field-effect semiconductor device of this invention into monolithic integrated circuits is also disclosed.

REFERENCES:
patent: 3263095 (1966-07-01), Fang
patent: 3283221 (1966-11-01), Heiman
patent: 3708731 (1973-01-01), McDonald
patent: 4163237 (1979-07-01), Dingle
patent: 4424525 (1984-01-01), Mimura

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