Patent
1989-01-13
1991-02-05
Jackson, Jr., Jerome
357 4, 357 30, H01L 2978, H01L 2710
Patent
active
049909819
ABSTRACT:
A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.
Kaneko Yoshiyuki
Matsumaru Haruo
Tanaka Yasuo
Tsukada Toshihisa
Tsutsui Ken
Hitachi , Ltd.
Jackson, Jr. Jerome
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