Semiconductor laser with low vertical far-field

Details Semiconductor laser with low vertical far-field Semiconductor laser with low vertical far-field

1994-08-19

1997-01-14

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 318

Patent

active

055947492

ABSTRACT:
A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area. The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.

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