Method for forming an inductor devices using substrate biasing t

Details Method for forming an inductor devices using substrate biasing t Method for forming an inductor devices using substrate biasing t

1997-04-22

1998-06-23

Dang, Trung

Semiconductor device manufacturing: process

Making passive device

438171, 438238, 438329, H01L 2120

Patent

active

057705097

ABSTRACT:
Methods for foming an inductor devices used for impedance matching in the radio frequency integrated circuits are disclosed. In the integrated inductor device according to the present invention, an additional electrode is arranged in surroundings of an inductor metal line, and the reverse bias voltage is applied to the region between the substrate and the electrode so as to form a depletion layer. Therefore, the substrate biasing is effected and thus an inductor having improved performance can be formed by decreasing the parasitic capacitance between the inductor metal line and the substrate. The present invention can also be applied to another semiconductor device having metal lines and pads.

REFERENCES:
patent: 5450263 (1995-09-01), Desaigoudar et al.
patent: 5539241 (1996-07-01), Abidi et al.
patent: 5550068 (1996-08-01), Hirano et al.

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