Heterojunction Schottky gate MESFET with lower channel ridge bar

Details Heterojunction Schottky gate MESFET with lower channel ridge bar Heterojunction Schottky gate MESFET with lower channel ridge bar

1983-09-14

1985-02-12

Clawson, Jr., Joseph E.

357 15, 357 16, 357 20, H01L 2980

Patent

active

044994818

ABSTRACT:
An FET with an extremely short channel formed by the apex of a substrate ridge structure protruding upward through the channel layer toward a Schottky-barrier gate contact. The device is formed by etching a modulation-doped substrate to form an upwardly protruding ridge with the apex modulation-doped. A semiconductor layer is then disposed over the substrate surface with the protruding ridge to obtain an epitaxial interface therebetween. Source and drain regions are doped into the semiconductor layer on opposite sides of the ridge structure. Finally, ohmic contacts are formed on the semiconductor layer over the source and drain regions and a Schottky-barrier metalization is deposited on the semiconductor layer above the ridge structure. This device has a very short channel, a low transit time, a low gate capacitance, and an enhanced transconductance.

REFERENCES:
patent: 4077111 (1978-03-01), Driver et al.
patent: 4145459 (1979-03-01), Goel
patent: 4156879 (1979-05-01), Lee
patent: 4173063 (1979-11-01), Kniepkamp et al.
patent: 4189737 (1980-02-01), Schrader et al.
patent: 4325181 (1982-04-01), Yoder
patent: 4336549 (1982-06-01), Ladd, Jr.
patent: 4424525 (1984-01-01), Mimura
Mok et al. "The Characteristics and Applications of a V-Shaped Notched-Chel Field-Effect Transistor (VFET)" Solid State Electronics, vol. 19, p. 159, (1976).

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