Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1993-08-03
1998-06-23
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 83, 117224, 117914, C30B 3500
Patent
active
057699437
ABSTRACT:
Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.
REFERENCES:
patent: 2588254 (1952-03-01), Lark-Horovitz et al.
patent: 2798989 (1957-07-01), Welker
patent: 3033659 (1962-05-01), Fischer
patent: 3124936 (1964-03-01), Melehy
patent: 3259759 (1966-07-01), Giaever
patent: 3296033 (1967-01-01), Scuro et al.
patent: 3338753 (1967-08-01), Horsting
patent: 3342567 (1967-09-01), Dingwall
patent: 3356464 (1967-12-01), Hulliger
patent: 3414387 (1968-12-01), Syoev et al.
patent: 3626583 (1971-12-01), Abbott et al.
patent: 3674568 (1972-07-01), Caprarola
patent: 3696038 (1972-10-01), Davies et al.
patent: 3721583 (1973-03-01), Blakeslee
patent: 3873370 (1975-03-01), Hampl, Jr. et al.
patent: 4029520 (1977-06-01), Hampl, Jr.
patent: 4050905 (1977-09-01), Swinehart
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4368416 (1983-01-01), James
patent: 4457897 (1984-07-01), Stanley et al.
patent: 4469977 (1984-09-01), Quinn et al.
patent: 4551196 (1985-11-01), Capper et al.
patent: 4620897 (1986-11-01), Nakajima
patent: 4644753 (1987-02-01), Burke
patent: 4664960 (1987-05-01), Ovshinsky
patent: 4786335 (1988-11-01), Knowles et al.
patent: 4847666 (1989-07-01), Heremans et al.
patent: 4855810 (1989-08-01), Gelb et al.
patent: 4869971 (1989-09-01), Nee et al.
patent: 4999082 (1991-03-01), Kremer et al.
patent: 5006178 (1991-04-01), Bijvoets
patent: 5021224 (1991-06-01), Nakajima
patent: 5051786 (1991-09-01), Nicollian et al.
patent: 5064476 (1991-11-01), Recine, Sr.
patent: 5156004 (1992-10-01), Wu et al.
patent: 5181086 (1993-01-01), Yoshida
patent: 5210428 (1993-05-01), Goossen
patent: 5288336 (1994-02-01), Strachan et al.
patent: 5415699 (1995-05-01), Harman
patent: 5436467 (1995-07-01), Elsner et al.
patent: 5439528 (1995-08-01), Miller
Vining, C.B. & J.-P. Fleurial, "Silicon-Germanium: an Overview of Recent Developments," Proceedings of the Xth Intl. Conference on thermoelectrics, Univ. of Wales, Cardiff, UK, pp. 1-14, Sep. 10-12, 1991.
Caillat, T., et al., "Search for New High Temperature Thermoelectric Materials," Proceedings of the 27th Intersociety Energy Conversion Engineering Conference, pp. 3499-3503, Aug. 3-7, 1992.
Caillat, T., et al., "Thermoelectric Properties of a New Semiconductor IrSb.sub.3," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX pp. 98-101, Oct. 7-9, 1992.
Caillat, T., et al., "Phase Diagram of the Ir-Sb System on the Antimony-Rich Part," Journal of Alloys and Compounds, 1993.
Kjekshus, A., "Thigh Temperature X-Ray Study of the Thermal Expansion of IrAs3 and IrSb3," Acta Chemica Scandinava, pp. 678-681, 1961.
Fleurial, J.-P., "Thermal and Electrical Transport Properties Modeling of Bi.sub.2 Te.sub.3 -Based Alloys," Proceedings of the XIth Intl. Conf. on Thermoelectrics, Univ. of Texas, Arlington, TX pp. 276-281, Oct. 7-9, 1992.
Bass, J.C. and N. Elsner, "Current Thermoelectric Programs at Hi-Z Technology, Inc.," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX, pp. 1-3, Oct. 7-9, 1992.
Borschevsky, A., et al., "Two-Zone Bridgman Furnace with Sharp Thermal Gradient," NASA Tech Brief, 18 (3) Item #74, Mar. 1994.
Dudkin, L.D., et al., "On the Doping of the Semiconductor Compound CoSb.sub.3," Zhur. Neorg. Khim., 1958.
Feschotte P., and D. Lorin, "Les Systemes Binaires Fe-Sb, Co-Sb et Ni-Sb," J. Less Common Metals, pp. 155, 255-269, 1989.
Kajikawa, T., et al., "Advancement of Thermoelectric Energy Conversion Systems in Japan," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX, pp. 175-180, Oct. 7-9, 1992.
Kliche, G. W. Bauhofer, "Infrared Reflection Spectra and Electrical Properties of the Skutterudite RhSb3," Mat. Res. Bull., (22), pp. 551-555, 1987.
Korenstein, R. et al., "Preparation and Characterization of the Skutterudite-Related Phases CoGel.5 and CoGel.5Sel.5," Inorg. Chemist., 16(9), pp. 2344-2346, 1977.
Lutz, H.D., et al. "Far-Infrared Spectra, Optical and Dielectric Constants, Effective Charges and Lattice Dynamics of the Skutterudites CoP3CoAs3 and CoSb3," Phys. Stat. Sol. (b), pp. 112, 549-557, 1982.
Lyons, A., et al., "The Preparation and Characterization of Some Skutterudite Related Compounds," Mat. Res. Bull., (13), pp. 125-128, 1978.
Nikolaev, Yu V., et al., "A Terrestrial Solar Power Plant with Direct Energy Conversion," Proceedings of the 27th Intersociety Energy Conversion Conference, pp. 3433-3436, Aug. 3-7, 1992.
Vining, C.B., "The Thermoelectric Limit ZT=1: Fact or Artifact . . . ," Proceedings of the XIth Intl. Conference on Thermoelectrics, Univ. of Texas, Arlington, TX, pp. 223-231, Oct. 7-9, 1992.
Zhuravlev, N.N., et al., Vestn. Mosk. Univ., Ser. Mat., Mekh., Astron., Fiz. I Khim., 13 (5) pp. 79-82, 1958.
Borshchevsky Alexander
Caillat Thierry F.
Fleurial Jean-Pierre
California Institute of Technology
Garrett Felisa
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