Two-dimensional semiconductor image sensor including an arrangem

Facsimile and static presentation processing – Facsimile – Recording apparatus

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H04N 314

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active

046283641

ABSTRACT:
A two-dimensional semiconductor image sensor has row lines which are selectable over a vertical shift register for driving first selection transistors of the sensor elements. Column lines are connected to a read-out line by way of first switches which are sequentially driven by the outputs of a horizontal shift register. Blooming is reduced. This is achieved by providing second selection transistors for the sensor elements which are connected in series with the first selection transistors and which are sequentially driven by the outputs of the horizontal shift register, and is further achieved by further switches which connect the column lines to a reference potential and which are inversely selectable relative to the first switches.

REFERENCES:
patent: 3946151 (1976-02-01), Kamiyama et al.
patent: 4360833 (1980-11-01), Kinoshita et al.
patent: 4547806 (1985-10-01), Herbst et al.
"Solid-State Image Sensor Array RA 100.times.100", Reticon Preliminary Data Sheet, Sep. 28, 1978, six pages, three tables, 7 FIGS.
J. A. Hall, "Amplifier and Amplifier Noise Considerations", Solid State Imaging, NATO Advanced Study Institute Series E: Applied Sciences, No. 16, 1976, pp. 535-559.
M. H. White et al, "Characterization of Surface Channel CCD Arrays at Low Light Levels", Journal of Solid-State Circuits, vol. SC-9, No. 1, Feb. 1974, pp. 1-13.

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