Epitaxy of high T.sub.C superconductors on silicon

Details Epitaxy of high T.sub.C superconductors on silicon Epitaxy of high T.sub.C superconductors on silicon

1995-05-18

1997-01-14

Ryan, Patrick

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Superconductor layer and one semiconducting or silicon layer

428688, 428930, 505237, 505238, 505701, B32B 900

Patent

active

055939511

ABSTRACT:
An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.

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Engineer's Guide to High Temp. Super., by Doss Wiley & Sons 1989, pp. 274-277, 381-386.
"Superconductor's Material Problems," Science vol. 240, Apr. 1, 1988 pp. 25-27.

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