Semiconductor device capable of preventing humidity invasion

Details Semiconductor device capable of preventing humidity invasion Semiconductor device capable of preventing humidity invasion

1994-07-22

1997-01-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437226, 437227, 148DIG28, H01L 21304

Patent

active

055939252

ABSTRACT:
In an IC chip having an interlevel insulation film constituted by a first level silicon oxide film, a spin-on-glass film, a second level silicon oxide film, the SOG film is partially removed in a buffer region of a closed loop shape inside of the chip periphery and surrounding the chip inner region. The second level silicon oxide film and a passivation insulation film are formed covering the SOG film and buffer region. Water contents are intercepted by the buffer region and will not reach the element region. It is therefore possible to prevent an inversion of the conductivity type at the surface of a well region in the element region or a corrosion of wiring layers, thereby improving the reliability of an IC device.

REFERENCES:
patent: 4925808 (1990-05-01), Richardson
patent: 5017512 (1991-05-01), Takagi
patent: 5024970 (1991-06-01), Mori
patent: 5036382 (1991-07-01), Yamaha
patent: 5132252 (1992-07-01), Shiraiwa et al.
patent: 5136354 (1992-08-01), Morita et al.
patent: 5217916 (1993-06-01), Anderson et al.
patent: 5300816 (1994-04-01), Lee et al.
patent: 5414297 (1995-05-01), Morita et al.

Affiliated with

Also associated with

Rating

Semiconductor device capable of preventing humidity invasion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device capable of preventing humidity invasion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of preventing humidity invasion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1387925