Method to determine the crystalline properties of an interface o

Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer

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250339, 356361, 356382, G01B 902, G01B 1102

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044987722

ABSTRACT:
Crystalline quality of a semiconductor material at its interface with an insulator is optically evaluated by a reflected light beam scanned in wavelength. The refractive index of the material at or near the interface is determined by calculation from the measured values of reflectivity extrema and compared, if desired, to the bulk refractive index of the material. This index is an indicia of the crystalline quality at the interface.

REFERENCES:
patent: 4352016 (1982-09-01), Duffy et al.
patent: 4352017 (1982-09-01), Duffy et al.
Ruiz-Urbieta et al., "Methods for Determining Film Thickness and Optical Constants of Films and Substrates", JOSA, vol. 61, No. 3, pp. 351-359, 3/71.
Goodman, "Optical Interference Method for the Approximate Determination of Refractive Index and Thickness of a Transparent Layer", Applied Optics, vol. 17, No. 17, pp. 2779-2787, 9/1/78.
"Optical Properties of Thin Solid Films" by O. S. Heavens, 1965, Dover Publications, Inc., New York, pp. 57-59 and 156-158.

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