Exposure mask

Details Exposure mask Exposure mask

1990-10-26

1997-01-14

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430396, G03F 900

Patent

active

055937993

ABSTRACT:
An exposure mask having phase shifting films of a predetermined thickness composed of a material transparent to the wavelength of exposure light and formed on a substrate transparent to such wavelength for causing a desired phase shift, wherein the phase shifting films are so patterned as to principally have arrangement of repeated patterns. Relative to the rule width L of the repeated patterns projected onto a work member to be exposed, a pattern having a rule width of 2 L/m is formed, in which m (.ltoreq.1) is a size reduction magnification in the use of a reduced-size projection exposer. The exposure mask is adapted for use in producing a diffraction grating as well. The mask is easily manufacturable without the necessity of any intricate process such as a positioned exposure, hence minimizing the number of required steps in manufacture while achieving a further fine work with an enhanced resolution higher than the known value.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5489509 (1990-04-01), Kawabata et al.
Improving Resolution in Photolithography w a Phase-Shift Mask, IEEE Transactions on Electron Devices, vol. ED-29, No.-12, Dec. 1982.

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