Method for manufacturing a combination of a pressure sensor and

Details Method for manufacturing a combination of a pressure sensor and Method for manufacturing a combination of a pressure sensor and

1997-05-30

1999-06-29

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

438 49, 438 50, 438 53, 438 59, H01L 2984

Patent

active

059181109

ABSTRACT:
In a method for manufacturing a combination of a pressure sensor and an electrochemical sensor, a basic structure for an ISFET is manufactured on a substrate made of silicon. After depositing a nitride layer as a pH-sensitive layer, the region of the ISFET is covered with a protective layer. In a region provided for a pressure sensor, a structured layer of polysilicon, provided as a membrane, is manufactured above a hollow space. Additional method steps for manufacturing electrical terminals of the sensors and, if required, additional integrated components, and for manufacturing printed conductor planes, are carried out in the context of a CMOS process. IMOX layers in the region of the gas sensor are wet-chemically removed down to the nitride layer. A platinum contact and an additional protective layer made of a PECVD oxide and a PECVD nitride are deposited. Additional layer structures for the gas sensor are manufactured. The pressure sensor is etched free either before the gas sensor is etched free, or after the deposition of the additional protective layer.

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