Method of making a high resistance drain junction resistor in a

Details Method of making a high resistance drain junction resistor in a Method of making a high resistance drain junction resistor in a

1995-04-13

1996-04-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437 40, 437 41, 437918, H01L 2170

Patent

active

055061672

ABSTRACT:
An improved SRAM resistor structure having implanted therein ions of an material in the surface layer of a drain junction region juxtaposed to an overlying metal contact layer providing the benefits of high resistance, low energy consumption, a single ion implantation step in an easily controlled process while producing a precise resistance desired and a method of making the SRAM resistor structure.

REFERENCES:
patent: 3925106 (1975-12-01), Ku et al.
patent: 4868618 (1989-09-01), Kalnitsky et al.
patent: 4965214 (1990-10-01), Choi et al.
patent: 5200356 (1993-04-01), Tanaka

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