Method of manufacturing liquid-crystal display panel

Fishing – trapping – and vermin destroying

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437 34, 437 51, 437181, H01L 2170

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active

055061656

ABSTRACT:
To prevent occurrence of a breakdown in the drains of thin-film transistors formed in a display area, without an increase in the number of manufacturing steps required for a conventional manufacturing method. When the source and drain regions of each MOS transistor in a display area are formed by impurity implantation using its gate electrode as a mask, the side walls of the gate electrode across the channel are covered with a mask provided together with the mask for covering the MOS transistors of one type of the complementary MOS transistors in an area outside the display area.

REFERENCES:
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5256562 (1993-10-01), Vu et al.
patent: 5320973 (1994-06-01), Kobayashi
patent: 5405490 (1995-04-01), Park et al.

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