Fishing – trapping – and vermin destroying
Patent
1995-03-15
1996-04-09
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437 34, 437 51, 437181, H01L 2170
Patent
active
055061656
ABSTRACT:
To prevent occurrence of a breakdown in the drains of thin-film transistors formed in a display area, without an increase in the number of manufacturing steps required for a conventional manufacturing method. When the source and drain regions of each MOS transistor in a display area are formed by impurity implantation using its gate electrode as a mask, the side walls of the gate electrode across the channel are covered with a mask provided together with the mask for covering the MOS transistors of one type of the complementary MOS transistors in an area outside the display area.
REFERENCES:
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5256562 (1993-10-01), Vu et al.
patent: 5320973 (1994-06-01), Kobayashi
patent: 5405490 (1995-04-01), Park et al.
Hitachi , Ltd.
Nguyen Tuan H.
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