Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1994-11-15
1997-05-13
Breneman, R. Bruce
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438964, 438909, 438665, 438684, H01L 2170
Patent
active
056292236
ABSTRACT:
The present invention develops a process for forming hemi-spherical grained silicon storage capacitor plates by the steps of: forming a silicon layer over a pair of neighboring parallel conductive lines, the silicon layer making contact to an underlying conductive region; patterning the silicon layer to form individual silicon capacitor plates; exposing the silicon capacitor plates to a fluorine based gas mixture during an high vacuum annealing period, thereby transforming the silicon capacitor plates into the semi-spherical grained silicon capacitor plates; conductively doping the hemi-spherical grained silicon capacitor plates; forming a capacitor dielectric layer adjacent and coextensive the semi-spherical grained silicon capacitor plates; and forming a second conductive silicon layer superjacent and coextensive the capacitor dielectric layer.
REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5162248 (1992-11-01), Dennisson et al.
patent: 5480826 (1996-01-01), Sugahara et al.
"A new cylindrical capacitor using HSG Si for 256 Mb DRAMs " by Watanabe et al. IEDM, 1992, pp. 259-262.
Breneman R. Bruce
Micro)n Technology, Inc.
Paladugu Ramamohan Rao
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