Method of fabricating n-type and p-type microcrystalline semicon

Details Method of fabricating n-type and p-type microcrystalline semicon Method of fabricating n-type and p-type microcrystalline semicon

1988-03-28

1990-01-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG45, 148DIG122, 148 333, 427 38, 437 2, 437 18, 437101, 437233, 437914, 437170, H01L 2120, H01L 2114, H01L 21306

Patent

active

048913308

ABSTRACT:
A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

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patent: 4637895 (1987-01-01), Ovshinsky et al.
patent: 4726851 (1988-02-01), Matsumura et al.

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