Precision voltage reference with lattice damage

Details Precision voltage reference with lattice damage Precision voltage reference with lattice damage

1991-10-25

1992-09-08

Mintel, William

357 63, 357 67, H01L 2990

Patent

active

051462974

ABSTRACT:
A precision voltage reference device having a forward biased and reverse biased silicon junctions arranged as a concentric circular annular monolithic structure is described. Selective hardening of the forward biased junction is provided to adjust carrier lifetime in said junction thereby providing a radiation hardened device. The selective hardening is provided by implanting non-dopant species to induce a predetermined amount of lattice damage at the forward biased junction. This arrangement permits both the forward biased junction and the reverse biased junction to be fabricated on a common substrate.

REFERENCES:
patent: 4353754 (1982-10-01), Yamanaka et al.
patent: 4689667 (1987-08-01), Aronowitz
patent: 4905060 (1990-02-01), Chinone et al.
patent: 4948989 (1990-08-01), Spratt

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