Method of manufacturing phase-shifting mask comprising a light s

Details Method of manufacturing phase-shifting mask comprising a light s Method of manufacturing phase-shifting mask comprising a light s

1995-12-22

1998-03-10

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430313, 430394, G03F 900

Patent

active

057259690

ABSTRACT:
A phase-shifting mask which has a supplementary pattern arranged for preventing unwanted constructive interference of light caused when isolated patterns (transparent regions) are arranged adjacently. Also, a method for manufacturing such a phase-shifting mask, including the steps of providing a transparent substrate, a phase-shifting layer having transparent regions formed on the transparent substrate, and a supplementary light shielding patterns formed on the phase-shifting layer between the transparent regions.

REFERENCES:
patent: 5286581 (1994-02-01), Lee
patent: 5358807 (1994-10-01), Okamoto
patent: 5429897 (1995-07-01), Yoshioka et al.
patent: 5565286 (1996-10-01), Lin
E. Tamechika et al., "Resolution Improvement Using Auxiliary Pattern Groups in Oblique Illumination Lithography," Dec. 1993, pp. 5856-5862, Jpn. J. Appl. Phys., vol. 32, Pt. 1 No. 12B.
M.D. Levenson, et al., "Improving Resolution in Photolithography with a Phase-Shifting Mask," Dec. 1982, pp. 1828-1836, IEEE Transactions on Electron Devices, vol. ED. 29, No. 12.
B.J. Lin, "The Attenuated Phase-Shifting Mask," Jan 1992, pp. 43-47, Solid State Technology.

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