Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1995-05-25

1999-06-29

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 98, 257 99, 257744, 257772, H01L 2715, H01L 3300, H01L 2348

Patent

active

059172002

ABSTRACT:
An Au layer 3 and a Sn layer 5 are laminated on a barrier layer 8 which is formed on an optical circuit substrate 1. An Au layer 5 having a predetermined thickness is formed on the laminated layers as a top layer. A junction portion 2 is constituted of these layers. An electrode layer of an optical semiconductor element 9 is made to contact with the top Au layer 5 and the optical semiconductor element 9 is pressed to the optical circuit substrate 1. Then, by heating, the optical semiconductor element 9 is joined on the optical circuit substrate. A weight % of Au and Sn in the junction portion 2 of the optical circuit substrate 1 is about 80%:20% before the joining. The electrode layer is formed as a thin Au layer. The optical circuit substrate 1 is heated at a temperature of 280.degree. C. or more such that the Au layer and the Sn layer are melted and is cooled such that Au and Sn are solidified.

REFERENCES:
patent: 3986255 (1976-10-01), Mandal
patent: 5197654 (1993-03-01), Katz et al.
patent: 5234153 (1993-08-01), Bacon et al.
patent: 5280414 (1994-01-01), Davis et al.
patent: 5298735 (1994-03-01), Peterson et al.
Patent Abstracts of Japan, vol. 13, No. 393 (E-814), Aug. 31, 1989.
Chin C. Lee et al., "A New Bonding Technology Using Gold and Tin Multilayer Composite Structures", IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 14, No. 2, Jun. 1991, pp. 407-411.

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