Method of controlling forward voltage across Schottky diode

Details Method of controlling forward voltage across Schottky diode Method of controlling forward voltage across Schottky diode

1985-07-19

1987-09-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG140, 148DIG139, 427124, 357 15, 437187, H01L 2948

Patent

active

046929916

ABSTRACT:
During the deposition of a metallic layer on an N-type semiconductive region to form a Schottky diode in a structure placed in a highly evacuated chamber, at least one selected gas is introduced into the chamber to control the forward voltage across the diode.

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Iyer et al., "Ambient Gas Effects on the Reaction of Titanium with Silicon," J. Electrochem. Soc., 132, No. 9, Sep. 1985, pp. 2240-2245.

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