Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-04-26
1995-12-05
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257 64, 257 72, H01L 2978, H01L 2712
Patent
active
054731682
ABSTRACT:
The thin film transistor of the invention includes a substrate; a gate electrode formed on the substrate; a semiconductor layer insulated from the gate electrode, the semiconductor layer being formed on the substrate to cover the gate electrode; a first contact layer and a second contact layer which are made of n-type microcrystalline silicon having a resistivity of 10 .OMEGA.cm or less, the first and second contact layers being in contact with the semiconductor layer so as cover part of the gate electrode; a source electrode which is in contact with part of the first contact layer; and a drain electrode which is in contact with part of the second contact layer.
REFERENCES:
patent: 5122849 (1992-06-01), Tanaka et al.
Katayama Mikio
Kawai Katsuhiro
Monin, Jr. Donald L.
Sharp Kabushiki Kaisha
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