Method for manufacturing tunnel-effect sensors

Details Method for manufacturing tunnel-effect sensors Method for manufacturing tunnel-effect sensors

1994-03-25

1995-12-05

Thomas, Tom

Fishing, trapping, and vermin destroying

437 72, 437974, 1566531, H01L 21311

Patent

active

054729165

ABSTRACT:
In a method for manufacturing tunnel-effect sensors, a tip (2) composed of the silicon of the substrate (1) is produced on a substrate (1) of silicon with electrically conductively doped regions (4) by oxidation of the silicon using a nitride mask on the surface. Using the planarized oxide layer (5) produced in the oxidation step, a beam (3) of polysilicon that is anchored on the substrate (1) is applied, for example, over the tip (2) as a cooperating electrodes for the utilization of the tunnel effect and is electrically conductively doped. Subsequently, the oxide layer (5) is removed.

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