Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-02-18
1995-12-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257760, 257758, H01L 21321, H01L 23485
Patent
active
054790549
ABSTRACT:
A polycrystalline silicon film is formed on the surface of a semiconductor substrate. An oxide film having a first impurity concentration is formed to cover the polycrystalline silicon film. A polycrystalline silicon film and a refractory metal silicide are formed on the surface of the oxide film having the first impurity concentration. An oxide film having a second impurity concentration higher than the first impurity concentration is formed to cover the polycrystalline silicon film and the refractory metal silicide. The third conductive layer is formed on the surface of the oxide film having the second impurity concentration.
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"Rapid Flow of Doped Glasses for VLSIC Fabication", by Jacques S. Mercier, Solid-State Technology/Jul. 1987, pp. 85-91.
"0.3 .mu.m Process Technique", by Takeo Yoshimi, Trikeps Co., Ltd., 1990.
"Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections", by William J. Patrick et al., J. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, pp. 1778-1784.
Brown Peter Toby
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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