Four layer overvoltage protection device having buried regions a

Details Four layer overvoltage protection device having buried regions a Four layer overvoltage protection device having buried regions a

1993-09-10

1995-12-26

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257112, 257119, 257130, 257155, 257603, 257914, H01L 29747

Patent

active

054790310

ABSTRACT:
An overvoltage protection device having multiple shorting dots in the emitter region and multiple buried regions substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the overshoot voltage value of the device while maintaining the high surge capacities of the device. Further, doping types and concentrations have been modified from that known in the prior art to reduce overshoot providing a more accurate and sensitive overvoltage protection device than that known previously in the prior art.

REFERENCES:
patent: 4967256 (1990-10-01), Pathak et al.
patent: 5001537 (1991-03-01), Colman et al.
patent: 5371385 (1994-12-01), Hayashi et al.
IBM Technical Disclosure Bulletin, "Gettering Technique and Structure," E. H. Bogardus et al., vol. 16, No. 4, 1973, pp. 1066-1067.

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