Direct DC to RF conversion by impulse excitation

Details Direct DC to RF conversion by impulse excitation Direct DC to RF conversion by impulse excitation

1988-04-25

1989-02-14

Wong, Peter S.

Electric power conversion systems

Current conversion

Integrated circuit

363 8, 372 92, 333195, 333204, 333219, 357 30, H02M 100

Patent

active

048050849

ABSTRACT:
A device for converting DC to RF has a monolithic PIN diode adapted to be coupled to a DC supply. The diode receives light switching pulses and is coupled to a monolithic resonator. The monolithic form provides compactness and reliability, while the diode, which is reversed biased when OFF, prevents substrate leakage currents. The diode and the resonator can be made in a single substrate, e.g., silicon, or in different substrates, e.g., silicon for the diode to obtain a long carrier lifetime and, thus, minimize the light pulse repetition rate, and GaAs for the resonator to obtain a high Q. The resonator can also act as an impedance transformer.

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J. M. Proud, Jr. et al., "High-Frequency Waveform Generation Using Optoelectronic Switching in Silicon," IEEE Trans. Microwave Theory Tech., vol. MTT-26, No. 3, Mar. 1978, pp. 137-140.
C. S. Chang et al., "Direct DC to RF Conversion by a Picosecond Optoelectronic Switching", IEEE MTT-S Internation Microwave Symposium Digest, 1984, pp. 540-541.
G. A. Mourou et al., "Picosecond Electronics and Optoelectronics", Springer-Verlag, pp. 216-218, "Direct DC to RF Conversion by Impulse Excitation of a Resonant Cavity".
P. J. Stabile et al., "Optically Controlled Lateral PIN Diodes and Microwave Control Circuits", RCA Review, vol. 47, 12/86, pp. 443-456.

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