High voltage capacitor for integrated circuits

Details High voltage capacitor for integrated circuits High voltage capacitor for integrated circuits

1987-11-30

1989-02-14

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 51, 29 2542, H01G 410, H01G 700, H01L 2702

Patent

active

048050717

ABSTRACT:
High voltage capacitors particularly suited for a BiCMOS process are formed in conjunction with prior art low voltage capacitors. In a first embodiment of a high voltage capacitor, an N+ region (66) is used as a first plate of the capacitor. The thermal gate oxice layer (48) used in conjunction with the MOS transistors (22,24) is also grown over the N+ region (66). Since the thermal oxide growth over the N+ region is accelerated, a thicker oxide region will be formed. A polysilicon plate (70) is formed over the thick oxide region (68) at the same time the first plate (12) of the low voltage capacitor (10) is formed. Alternatively, a nitride layer (18) may be formed over the thick oxide layer (68). The nitride layer (18) is also used in the formation of a low voltage capacitor (10).

REFERENCES:
patent: 3320484 (1967-05-01), Riley et al.
patent: 3864817 (1975-02-01), Lapham et al.
patent: 4458295 (1984-07-01), Durschlag et al.
patent: 4675982 (1987-06-01), Noble et al.

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