Process for fabricating a vertical bipolar junction transistor

Details Process for fabricating a vertical bipolar junction transistor Process for fabricating a vertical bipolar junction transistor

1995-03-27

1995-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437141, 437152, 437917, 148DIG10, 148DIG11, 148DIG96, 257526, 257557, 257559, 257561, 257565, 257586, H01L 21265

Patent

active

054787602

ABSTRACT:
A process for fabricating a bipolar junction transistor by forming a trench in a silicon substrate. A lightly-doped base region is formed adjacent to the sidewalls of the trench, and a heavily-doped base region is formed under the bottom of the trench. Silicon oxide layers are formed along the sidewalls and bottom of the trench with a contact window provided to expose part of the lightly-doped base region. A polysilicon layer is formed in the trench, and is heavily doped by a dopant which in turn diffuses into the lightly-doped base region through the contact window to form an emitter region. A collector region is formed in the upper surface of the lightly-doped base region.

REFERENCES:
patent: 4916083 (1990-04-01), Monkowski et al.
patent: 4980302 (1990-12-01), Shimizu
patent: 5057443 (1994-10-01), Hutter
patent: 5387553 (1995-02-01), Moksvold et al.

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